Method and device for repairing semiconductor chips

ABSTRACT

The present invention provides a method and a device for repairing semiconductor chips. The method includes providing an LED module including a circuit substrate and a plurality of light-emitting units; driving the light-emitting units by a signal generator; measuring at least one light-emitting unit by a feature detector module so as to obtain an abnormal feature and define the at least one light-emitting unit as a bad light-emitting unit having the abnormal feature; projecting a laser light source generated by a laser generating module onto the bad light-emitting unit; removing the bad light-emitting unit from the circuit substrate by a chip pick-and-place module to form a vacancy; placing a good light-emitting unit inside the vacancy by the chip pick-and-place module; and electrically connecting the good light-emitting unit to the circuit substrate. Therefore, the bad light-emitting unit is replaced by the good light-emitting unit for repairing the LED module.

FIELD OF THE INVENTION

The present disclosure relates to a method and a device for repairingchips, and more particularly to a method and a device for repairingsemiconductor chips.

BACKGROUND OF THE INVENTION

In recent years, LEDs (light-emitting diodes) have been used widely dueto good light-emitting quality and high light-emitting efficiency. LEDshave been developed capable of emitting red, green, and blue light, andLEDs have been increasingly used for various applications such as afull-color LED display, so that color performance of the full-color LEDdisplay can be increased. Typically, the red, green, and blue lightsrespectively generated by the red, green, and blue LEDs mixed to formcolored light with high brightness and contrast, so as to display someinformation for viewer.

SUMMARY OF THE INVENTION

One aspect of the present disclosure relates to a method and a devicefor repairing semiconductor chips.

One of the embodiments of the present disclosure provides a method forrepairing semiconductor chips, including: providing an LED module thatincludes a circuit substrate and a light-emitting group disposed on thecircuit substrate and electrically connected to the circuit substrate,wherein the light-emitting group includes a plurality of light-emittingunits, each light-emitting unit includes an LED chip and a conductivesubstance disposed between a bottom side of the LED chip and the circuitsubstrate; providing the LED module with a predetermined signalgenerated by a signal generator so as to drive the light-emitting units;measuring at least one of the light-emitting units by a feature detectormodule so as to obtain an abnormal feature and define the at least onelight-emitting unit as a bad light-emitting unit having the abnormalfeature; projecting a laser light source generated by a laser generatingmodule onto the bad light-emitting unit so as to decrease the bondingstrength between the bad light-emitting unit and the circuit substrate;removing the bad light-emitting unit from the circuit substrate by achip pick-and-place module so as to form a vacancy on the light-emittinggroup; placing a good light-emitting unit inside the vacancy of thelight-emitting group by the chip pick-and-place module, wherein the goodlight-emitting unit includes a good LED chip and a new conductivesubstance disposed on a bottom side of the good LED chip; and thenprojecting the laser light source generated by the laser generatingmodule onto the good light-emitting unit so as to fix the goodlight-emitting unit on the circuit substrate and electrically connectthe good light-emitting unit to the circuit substrate.

Another one of the embodiments of the present disclosure provides amethod for repairing semiconductor chips, including: providing an LEDmodule that includes a circuit substrate and a plurality oflight-emitting units disposed on the circuit substrate and electricallyconnected to the circuit substrate, wherein at least one of thelight-emitting units is a bad light-emitting unit; providing the LEDmodule with a predetermined signal generated by a signal generator so asto drive the light-emitting units; measuring at least one of thelight-emitting units by a feature detector module so as to obtain anabnormal feature and define the at least one light-emitting unit as abad light-emitting unit having the abnormal feature; projecting a laserlight source generated by a laser generating module onto the badlight-emitting unit so as to decrease the bonding strength between thebad light-emitting unit and the circuit substrate; removing the badlight-emitting unit from the circuit substrate by a chip pick-and-placemodule so as to form a vacancy; placing a good light-emitting unitinside the vacancy by the chip pick-and-place module; and thenelectrically connecting the good light-emitting unit to the circuitsubstrate.

Yet another one of the embodiments of the present disclosure provides adevice for repairing semiconductor chips, and the device can be appliedto an LED module. The LED module includes a circuit substrate and aplurality of light-emitting units disposed on the circuit substrate andelectrically connected to the circuit substrate. The device forrepairing semiconductor chips includes a signal generator, a featuredetector module, a laser generating module and a chip pick-and-placemodule. The signal generator is electrically connected to the circuitsubstrate for providing the LED module with a predetermined signal so asto drive the light-emitting units. The feature detector module isadjacent to the circuit substrate for measuring at least one of thelight-emitting units so as to obtain an abnormal feature and define theat least one light-emitting unit as a bad light-emitting unit having theabnormal feature. The laser generating module is adjacent to the circuitsubstrate and disposed under the circuit substrate for generating alaser light source. The chip pick-and-place module is adjacent to thelight-emitting unit and disposed above the light-emitting unit. Thelaser light source generated by the laser generating module is projectedonto the bad light-emitting unit so as to decrease the bonding strengthbetween the bad light-emitting unit and the circuit substrate. The badlight-emitting unit is removed from the circuit substrate by the chippick-and-place module so as to form a vacancy, and a good light-emittingunit is placed inside the vacancy by the chip pick-and-place module.

Therefore, by matching the features of “providing the LED module with apredetermined signal generated by a signal generator so as to drive thelight-emitting units; and measuring at least one of the light-emittingunits by a feature detector module so as to obtain an abnormal featureand define the at least one light-emitting unit as a bad light-emittingunit having the abnormal feature;” or “a signal generator for providingthe LED module with a predetermined signal so as to drive thelight-emitting units; and a feature detector module for measuring atleast one of the light-emitting units so as to obtain an abnormalfeature and define the at least one light-emitting unit as a badlight-emitting unit having the abnormal feature”, the bad light-emittingunit can be found by the method and the device for repairingsemiconductor chips.

Therefore, by matching the features of “projecting a laser light sourcegenerated by a laser generating module onto the bad light-emitting unitso as to decrease the bonding strength between the bad light-emittingunit and the circuit substrate”, “removing the bad light-emitting unitfrom the circuit substrate by a chip pick-and-place module so as to forma vacancy”, “placing a good light-emitting unit inside the vacancy bythe chip pick-and-place module” and “electrically connecting the goodlight-emitting unit to the circuit substrate”, the bad light-emittingunit can be replaced by the good light-emitting unit so as to repair theLED module.

Therefore, by matching the features of “the laser generating moduleadjacent to the circuit substrate and disposed under the circuitsubstrate for generating a laser light source” and “the chippick-and-place module adjacent to the light-emitting unit and disposedabove the light-emitting unit”, the laser light source generated by thelaser generating module can be projected onto the bad light-emittingunit so as to decrease the bonding strength between the badlight-emitting unit and the circuit substrate, and the badlight-emitting unit can be removed from the circuit substrate by thechip pick-and-place module so as to form a vacancy. Whereby, a goodlight-emitting unit can be placed inside the vacancy by the chippick-and-place module, so that the bad light-emitting unit can bereplaced by the good light-emitting unit so as to repair the LED module.

To further understand the techniques, means and effects of the presentdisclosure, the following detailed descriptions and appended drawingsare hereby referred to, such that, and through which, the purposes,features and aspects of the present disclosure can be thoroughly andconcretely appreciated. However, the appended drawings are providedsolely for reference and illustration, without any intention to limitthe present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the present disclosure and, together with thedescription, serve to explain the principles of the present disclosure.

FIG. 1 shows a flowchart of a method for repairing semiconductor chipsaccording to the present disclosure;

FIG. 2 shows a schematic view of step S100 of the method for repairingsemiconductor chips according to the present disclosure;

FIG. 3 shows a schematic view of steps S102 and S104 of the method forrepairing semiconductor chips according to the present disclosure;

FIG. 4 shows a schematic view of steps S106 and S106(B) of the methodfor repairing semiconductor chips according to the present disclosure;

FIG. 5 shows a schematic view of step S108 of the method for repairingsemiconductor chips according to the present disclosure;

FIG. 6 shows a schematic view of step S110 of the method for repairingsemiconductor chips according to the present disclosure;

FIG. 7 shows a schematic view of steps S112, S114, and S114(B) of themethod for repairing semiconductor chips according to the presentdisclosure;

FIG. 8 shows a schematic view of step S106(A) of the method forrepairing semiconductor chips according to the present disclosure; and

FIG. 9 shows a schematic view of step S114(A) of the method forrepairing semiconductor chips according to the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of a method and a device for repairing semiconductor chipsaccording to the present disclosure are described herein. Otheradvantages and objectives of the present disclosure can be easilyunderstood by one skilled in the art from the disclosure. The presentdisclosure can be applied in different embodiments. Variousmodifications and variations can be made to various details in thedescription for different applications without departing from the scopeof the present disclosure. The drawings of the present disclosure areprovided only for simple illustrations, but are not drawn to scale anddo not reflect the actual relative dimensions. The following embodimentsare provided to describe in detail the concept of the presentdisclosure, and are not intended to limit the scope thereof in any way.

It should be understood that the definite articles like “the first,”“the second” or “the third” may be used to describe various componentsor signals, but these components or signals should not be limited todefinite articles. These definite articles are used for distinguish onecomponent from the other component or one signal from the other signal.Besides, the phrase “or” shown in the present disclosure should beinterpreted as anyone item listed in the correlated items or thecombination of multiple items listed in the correlated items accordingto the actual conditions.

Referring to FIG. 1 to FIG. 7, the present disclosure provides a methodfor repairing semiconductor chips, including the following steps:

Firstly, referring to FIG. 1 and FIG. 2, providing an LED module 1 thatincludes a circuit substrate 10 and a plurality of light-emitting units11 disposed on the circuit substrate 10 and electrically connected tothe circuit substrate 10 (step S100). In other words, the LED module 1includes a circuit substrate 10 and a light-emitting group G disposed onthe circuit substrate 10 and electrically connected to the circuitsubstrate 10, and the light-emitting group G includes a plurality oflight-emitting units 11.

For example, each light-emitting unit 11 includes an LED chip 111 and aconductive substance 112 disposed between a bottom side of the LED chip111 and the circuit substrate 10. In addition, the LED chip 111 may be aGaN LED chip or any type of LED chip. The conductive substance 112 maybe an anisotropic conductive film (ACF), an anisotropic conductive paste(ACP) or any type of conductive material. It should be noted that thebad light-emitting unit 11B may have an LED chip 111 that is unable toprovide a light source, or the bad light-emitting unit 11B may have aconductive substance 112 that is unable to provide a conductive path.However, it is merely an example and is not meant to limit the scope ofthe present disclosure.

Next, referring to FIG. 1 and FIG. 3, providing the LED module 1 with apredetermined signal S1 generated by a signal generator PG so as todrive the light-emitting units 1 (step S102); then measuring at leastone of the light-emitting units 11 by a feature detector module (Emmi)so as to obtain an abnormal feature S2 and define the at least onelight-emitting unit 11 as a bad light-emitting unit 11B having theabnormal feature (step S104). For example, the LED chip 111 of eachlight-emitting unit 11 receives the predetermined signal S1 so as togenerate a predetermined heat source or a predetermined light source. Inaddition, the signal generator PG can be a pattern generator and thepredetermined signal S1 provided by the signal generator PG can be aback current or a forward current. Furthermore, the abnormal feature S2measured by the feature detector module (Emmi) can be an abnormalfeature of heat liberation or an abnormal feature of light intensity,but the present disclosure is not limited thereto.

Afterward, referring to FIG. 1 and FIG. 4, projecting a laser lightsource L generated by a laser generating module 2 onto the badlight-emitting unit 11B so as to decrease the bonding strength or theadhesive strength between the bad light-emitting unit 11B and thecircuit substrate 10 (step S106). For example, when the laser lightsource L generated by the laser generating module 2 is projected ontothe bad light-emitting unit 11B, the bonding strength or the adhesivestrength between the bad light-emitting unit 11B and the circuitsubstrate 10 would be decreased, so that it is easy for the badlight-emitting unit 11B to separate from the circuit substrate 10.

Subsequently, referring to FIG. 1 and FIG. 5, removing the badlight-emitting unit 11B from the circuit substrate 10 by a chippick-and-place module 3 so as to form a vacancy G10 (step S108), orremoving the bad light-emitting unit 11B from the circuit substrate 10by a chip pick-and-place module 3 so as to form a vacancy G10 on thelight-emitting group G. For example, chip pick-and-place module 3 may bea vacuum sucker, a vacuum suction nozzle, or any type of pick and placemachine, but it is not meant to limit the scope of the presentdisclosure.

Thereafter, referring to FIG. 1 and FIG. 6, placing a goodlight-emitting unit 11N inside the vacancy G10 by the chippick-and-place module 3 (step S110), or placing a good light-emittingunit 11N inside the vacancy G10 of the light-emitting group G by thechip pick-and-place module 3. For example, the good light-emitting unit11N includes a good LED chip 111N and a new conductive substance 112Ndisposed on a bottom side of the good LED chip 111N, and the newconductive substance 112N may be an anisotropic conductive paste or anytype of conductive material, but it is not meant to limit the scope ofthe present disclosure.

Afterward, referring to FIG. 1 and FIG. 7, electrically connecting thegood light-emitting unit 11N to the circuit substrate 10 (step S112).For example, the step (S112) of electrically connecting the goodlight-emitting unit 11N to the circuit substrate 10 further includes:projecting the laser light source L generated by the laser generatingmodule 2 onto the good light-emitting unit 11N so as to fix the goodlight-emitting unit 11N on the circuit substrate 10 and electricallyconnect the good light-emitting unit 11N to the circuit substrate 10(step S114).

More particularly, referring to FIG. 1, FIG. 4 and FIG. 8, the step(S106) of projecting the laser light source L generated by the lasergenerating module 2 onto the bad light-emitting unit 11B furtherincludes: referring to FIG. 1 and FIG. 8, detecting a position of acontact interface between the circuit substrate 10 and the conductivesubstance 112 of the bad light-emitting unit 11B by a position detectingmodule 4 (step S106(A)); and then referring to FIG. 1 and FIG. 4,projecting the laser light source L generated by the laser generatingmodule 2 onto the contact interface between the circuit substrate 10 andthe conductive substance 112 of the bad light-emitting unit 11B so as todecrease the bonding strength between the circuit substrate 10 and theconductive substance 112 of the bad light-emitting unit 11B (stepS106(B)). For example, as shown in FIG. 8, the position detecting module4 at least includes a receiving element 40 for receiving a detectionwave L′ (such as a detection signal) that can be provided by the lasergenerating module 2, but it is not meant to limit the scope of thepresent disclosure.

More particularly, referring to FIG. 1, FIG. 7 and FIG. 9, the step(S114) of projecting the laser light source L generated by the lasergenerating module 2 onto the good light-emitting unit 11N furtherincludes: referring to FIG. 1 and FIG. 9, detecting a position of thenew conductive substance 112N of the good light-emitting unit 11N by aposition detecting module 4 (step S114(A)), and then referring to FIG. 1and FIG. 7, projecting the laser light source L generated by the lasergenerating module 2 onto the new conductive substance 112N of the goodlight-emitting unit 11N so as to solidify the new conductive substance112N (step S114(B)). For example, as shown in FIG. 9, the positiondetecting module 4 at least includes a receiving element 40 forreceiving a detection wave L′ (such as a detection signal) that can beprovided by the laser generating module 2, but it is not meant to limitthe scope of the present disclosure.

It should be noted that referring to FIG. 1 to FIG. 9, the presentdisclosure further provides a device Z for repairing semiconductorchips, including a signal generator PG, a feature detector module(Emmi), a laser generating module 2 and a chip pick-and-place module 3.For example, the device Z for repairing semiconductor chips can beapplied to an LED module 1. The LED module 1 includes a circuitsubstrate 10 and a plurality of light-emitting units 11 disposed on thecircuit substrate 10 and electrically connected to the circuit substrate10.

More particularly, the signal generator PG is electrically connected tothe circuit substrate 10 for providing the LED module 1 with apredetermined signal S1 so as to drive the light-emitting units 11. Inaddition, the feature detector module (Emmi) is adjacent to the circuitsubstrate 10 for measuring at least one of the light-emitting units 11so as to obtain an abnormal feature S2 and define the at least onelight-emitting unit 11 having the abnormal feature as a badlight-emitting unit 11B. For example, the LED chip 111 of eachlight-emitting unit 11 receives the predetermined signal S1 so as togenerate a predetermined heat source or a predetermined light source.Furthermore, the signal generator PG can be a pattern generator and thepredetermined signal S1 provided by the signal generator PG can be aback current or a forward current. Moreover, the abnormal feature S2measured by the feature detector module (Emmi) can be an abnormalfeature of heat liberation or an abnormal feature of light intensity,but the present disclosure is not limited thereto.

More particularly, referring to FIG. 4 and FIG. 7, the laser generatingmodule 2 is adjacent to the circuit substrate 10 and disposed under thecircuit substrate 10 for generating a laser light source L.

For example, as shown in FIG. 4, the laser light source L generated bythe laser generating module 2 can be projected onto the badlight-emitting unit 11B so as to decrease the bonding strength betweenthe bad light-emitting unit 11B and the circuit substrate 10. That is tosay, the laser light source L generated by the laser generating module 2can be projected onto the contact interface between the circuitsubstrate 10 and the conductive substance 112 of the bad light-emittingunit 11B so as to decrease the bonding strength between the circuitsubstrate 10 and the conductive substance 112 of the bad light-emittingunit 11B.

For example, as shown in FIG. 7, the laser light source L generated bythe laser generating module 2 can be projected onto the goodlight-emitting unit 11N so as to fix the good light-emitting unit 11N onthe circuit substrate 10 and electrically connect the goodlight-emitting unit 11N to the circuit substrate 10. That is to say, thelaser light source L generated by the laser generating module 2 can beprojected onto the new conductive substance 112N of the goodlight-emitting unit 11N so as to solidify the new conductive substance112N, so that the good light-emitting unit 11N can be fixed on thecircuit substrate 10 and electrically connected to the circuit substrate10.

More particularly, referring to FIG. 6 and FIG. 7, the chippick-and-place module 3 is adjacent to the light-emitting unit 11 anddisposed above the light-emitting unit 11. For example, the badlight-emitting unit 11B can be removed from the circuit substrate 10 bythe chip pick-and-place module 3 so as to form a vacancy G10 (as shownin FIG. 6), and a good light-emitting unit 11N can be placed inside thevacancy G10 by the chip pick-and-place module 3 (as shown in FIG. 7).

More particularly, referring to FIG. 8 and FIG. 9, the device Z forrepairing semiconductor chips further includes a position detectingmodule 4 adjacent to the circuit substrate 10 and disposed under thecircuit substrate 10 for detecting a position of a contact interfacebetween the circuit substrate 10 and a conductive substance 112 of thebad light-emitting unit 11B, or for detecting a position of a newconductive substance 112N of the good light-emitting unit 11N.

Therefore, by matching the features of “providing the LED module 1 witha predetermined signal S1 generated by a signal generator PG so as todrive the light-emitting units 11; and measuring at least one of thelight-emitting units 11 by a feature detector module (Emmi) so as toobtain an abnormal feature S2 and define the at least one light-emittingunit 11 as a bad light-emitting unit 11B having the abnormal feature;”or “a signal generator PG for providing the LED module 1 with apredetermined signal S1 so as to drive the light-emitting units 11; anda feature detector module (Emmi) for measuring at least one of thelight-emitting units 11 so as to obtain an abnormal feature S2 anddefine the at least one light-emitting unit 11 having the abnormalfeature S2 as a bad light-emitting unit 11B”, the bad light-emittingunit 11B can be found by the method and the device Z for repairingsemiconductor chips.

Therefore, by matching the features of “projecting a laser light sourceL generated by a laser generating module 2 onto the bad light-emittingunit 11B so as to decrease the bonding strength between the badlight-emitting unit 11B and the circuit substrate 10”, “removing the badlight-emitting unit 11B from the circuit substrate 10 by a chippick-and-place module 3 so as to form a vacancy G10”, “placing a goodlight-emitting unit 11N inside the vacancy G10 by the chippick-and-place module 3” and “electrically connecting the goodlight-emitting unit 11N to the circuit substrate 10”, the badlight-emitting unit 11B can be replaced by the good light-emitting unit11N so as to repair the LED module 1.

Therefore, by matching the features of “the laser generating module 2adjacent to the circuit substrate 10 and disposed under the circuitsubstrate 10 for generating a laser light source L” and “the chippick-and-place module 3 adjacent to the light-emitting unit 11 anddisposed above the light-emitting unit 11”, the laser light source Lgenerated by the laser generating module 2 can be projected onto the badlight-emitting unit 11B so as to decrease the bonding strength betweenthe bad light-emitting unit 11B and the circuit substrate 10, and thebad light-emitting unit 11B can be removed from the circuit substrate 10by the chip pick-and-place module 3 so as to form a vacancy G10.Whereby, a good light-emitting unit 11N can be placed inside the vacancyG10 by the chip pick-and-place module 3, so that the bad light-emittingunit 11B can be replaced by the good light-emitting unit 11N so as torepair the LED module 1.

The aforementioned descriptions merely represent the preferredembodiments of the present disclosure, without any intention to limitthe scope of the present disclosure which is fully described only withinthe following claims. Various equivalent changes, alterations ormodifications based on the claims of the present disclosure are all,consequently, viewed as being embraced by the scope of the presentdisclosure.

What is claimed is:
 1. A method for repairing semiconductor chips,comprising: providing an LED module that includes a circuit substrateand a light-emitting group disposed on the circuit substrate andelectrically connected to the circuit substrate, wherein thelight-emitting group includes a plurality of light-emitting units, eachlight-emitting unit includes an LED chip and a conductive substancedisposed between a bottom side of the LED chip and the circuitsubstrate; providing the LED module with a predetermined signalgenerated by a signal generator so as to drive the light-emitting units;measuring at least one of the light-emitting units by a feature detectormodule so as to obtain an abnormal feature and define the at least onelight-emitting unit as a bad light-emitting unit having the abnormalfeature; projecting a laser light source generated by a laser generatingmodule onto the bad light-emitting unit so as to decrease the bondingstrength between the bad light-emitting unit and the circuit substrate;removing the bad light-emitting unit from the circuit substrate by achip pick-and-place module so as to form a vacancy on the light-emittinggroup; placing a good light-emitting unit inside the vacancy of thelight-emitting group by the chip pick-and-place module, wherein the goodlight-emitting unit includes a good LED chip and a new conductivesubstance disposed on a bottom side of the good LED chip; and projectingthe laser light source generated by the laser generating module onto thegood light-emitting unit so as to fix the good light-emitting unit onthe circuit substrate and electrically connect the good light-emittingunit to the circuit substrate.
 2. The method of claim 1, wherein thestep of projecting the laser light source generated by the lasergenerating module onto the bad light-emitting unit further comprises:detecting a position of a contact interface between the circuitsubstrate and the conductive substance of the bad light-emitting unit bya position detecting module; and projecting the laser light sourcegenerated by the laser generating module onto the contact interfacebetween the circuit substrate and the conductive substance of the badlight-emitting unit so as to decrease the bonding strength between thecircuit substrate and the conductive substance of the bad light-emittingunit; wherein the position detecting module includes a receiving elementfor receiving a detection wave; wherein the LED chip is a GaN LED chip,the conductive substance is an anisotropic conductive film, and the newconductive substance is an anisotropic conductive paste; wherein the LEDchip of each light-emitting unit receives the predetermined signal so asto generate a predetermined heat source or a predetermined light source,the predetermined signal provided by the signal generator is a backcurrent, and the abnormal feature measured by the feature detectormodule is an abnormal feature of heat liberation.
 3. The method of claim1, wherein the step of projecting the laser light source generated bythe laser generating module onto the good light-emitting unit furthercomprises: detecting a position of the new conductive substance of thegood light-emitting unit by a position detecting module; and projectingthe laser light source generated by the laser generating module onto thenew conductive substance of the good light-emitting unit so as tosolidify the new conductive substance; wherein the position detectingmodule includes a receiving element for receiving a detection wave;wherein the LED chip is a GaN LED chip, the conductive substance is ananisotropic conductive film, and the new conductive substance is ananisotropic conductive paste; wherein the LED chip of eachlight-emitting unit receives the predetermined signal so as to generatea predetermined heat source or a predetermined light source, thepredetermined signal provided by the signal generator is a back current,and the abnormal feature measured by the feature detector module is anabnormal feature of heat liberation.
 4. A method for repairingsemiconductor chips, comprising: providing an LED module that includes acircuit substrate and a plurality of light-emitting units disposed onthe circuit substrate and electrically connected to the circuitsubstrate, wherein at least one of the light-emitting units is a badlight-emitting unit; providing the LED module with a predeterminedsignal generated by a signal generator so as to drive the light-emittingunits; measuring at least one of the light-emitting units by a featuredetector module so as to obtain an abnormal feature and define the atleast one light-emitting unit as a bad light-emitting unit having theabnormal feature; projecting a laser light source generated by a lasergenerating module onto the bad light-emitting unit so as to decrease thebonding strength between the bad light-emitting unit and the circuitsubstrate; removing the bad light-emitting unit from the circuitsubstrate by a chip pick-and-place module so as to form a vacancy;placing a good light-emitting unit inside the vacancy by the chippick-and-place module; and electrically connecting the goodlight-emitting unit to the circuit substrate.
 5. The method of claim 4,wherein the step of projecting the laser light source generated by thelaser generating module onto the bad light-emitting unit furthercomprises: detecting a position of a contact interface between thecircuit substrate and a conductive substance of the bad light-emittingunit by a position detecting module; and projecting the laser lightsource generated by the laser generating module onto the contactinterface between the circuit substrate and the conductive substance ofthe bad light-emitting unit so as to decrease the bonding strengthbetween the circuit substrate and the conductive substance of the badlight-emitting unit; wherein the position detecting module includes areceiving element for receiving a detection wave; wherein the LED chipis a GaN LED chip, the conductive substance is an anisotropic conductivefilm, and the new conductive substance is an anisotropic conductivepaste; wherein the LED chip of each light-emitting unit receives thepredetermined signal so as to generate a predetermined heat source or apredetermined light source, the predetermined signal provided by thesignal generator is a back current, and the abnormal feature measured bythe feature detector module is an abnormal feature of heat liberation.6. The method of claim 4, wherein the step of electrically connectingthe good light-emitting unit to the circuit substrate further comprises:projecting the laser light source generated by the laser generatingmodule onto the good light-emitting unit so as to fix the goodlight-emitting unit on the circuit substrate and electrically connectthe good light-emitting unit to the circuit substrate.
 7. The method ofclaim 6, wherein the step of projecting the laser light source generatedby the laser generating module onto the good light-emitting unit furthercomprises: detecting a position of the new conductive substance of thegood light-emitting unit by a position detecting module; and projectingthe laser light source generated by the laser generating module onto thenew conductive substance of the good light-emitting unit so as tosolidify the new conductive substance; wherein the position detectingmodule includes a receiving element for receiving a detection wave;wherein the LED chip is a GaN LED chip, the conductive substance is ananisotropic conductive film, and the new conductive substance is ananisotropic conductive paste; wherein the LED chip of eachlight-emitting unit receives the predetermined signal so as to generatea predetermined heat source or a predetermined light source, thepredetermined signal provided by the signal generator is a back current,and the abnormal feature measured by the feature detector module is anabnormal feature of heat liberation.
 8. A device for repairingsemiconductor chips, the device being applied to an LED module, the LEDmodule including a circuit substrate and a plurality of light-emittingunits disposed on the circuit substrate and electrically connected tothe circuit substrate, the device comprising: a signal generatorelectrically connected to the circuit substrate for providing the LEDmodule with a predetermined signal so as to drive the light-emittingunits; a feature detector module adjacent to the circuit substrate formeasuring at least one of the light-emitting units so as to obtain anabnormal feature and define the at least one light-emitting unit as abad light-emitting unit having the abnormal feature; a laser generatingmodule adjacent to the circuit substrate and disposed under the circuitsubstrate for generating a laser light source; and a chip pick-and-placemodule adjacent to the light-emitting unit and disposed above thelight-emitting unit; wherein the laser light source generated by thelaser generating module is projected onto the bad light-emitting unit soas to decrease the bonding strength between the bad light-emitting unitand the circuit substrate; wherein the bad light-emitting unit isremoved from the circuit substrate by the chip pick-and-place module soas to form a vacancy, and a good light-emitting unit is placed insidethe vacancy by the chip pick-and-place module.
 9. The device of claim 8,further comprising: a position detecting module adjacent to the circuitsubstrate and disposed under the circuit substrate for detecting aposition of a contact interface between the circuit substrate and aconductive substance of the bad light-emitting unit, wherein the laserlight source generated by the laser generating module is projected ontothe contact interface between the circuit substrate and the conductivesubstance of the bad light-emitting unit so as to decrease the bondingstrength between the circuit substrate and the conductive substance ofthe bad light-emitting unit, wherein the position detecting moduleincludes a receiving element for receiving a detection wave, and whereinthe LED chip is a GaN LED chip, the conductive substance is ananisotropic conductive film, and the new conductive substance is ananisotropic conductive paste; and wherein the LED chip of eachlight-emitting unit receives the predetermined signal so as to generatea predetermined heat source or a predetermined light source, thepredetermined signal provided by the signal generator is a back current,and the abnormal feature measured by the feature detector module is anabnormal feature of heat liberation.
 10. The device of claim 8, furthercomprising: a position detecting module adjacent to the circuitsubstrate and disposed under the circuit substrate for detecting aposition of a new conductive substance of the good light-emitting unit,wherein the laser light source generated by the laser generating moduleis projected onto the good light-emitting unit so as to fix the goodlight-emitting unit on the circuit substrate and electrically connectthe good light-emitting unit to the circuit substrate, and the laserlight source generated by the laser generating module is projected ontothe new conductive substance of the good light-emitting unit so as tosolidify the new conductive substance, wherein the position detectingmodule includes a receiving element for receiving a detection wave, andwherein the LED chip is a GaN LED chip, the conductive substance is ananisotropic conductive film, and the new conductive substance is ananisotropic conductive paste; and wherein the LED chip of eachlight-emitting unit receives the predetermined signal so as to generatea predetermined heat source or a predetermined light source, thepredetermined signal provided by the signal generator is a back current,and the abnormal feature measured by the feature detector module is anabnormal feature of heat liberation.